Abstract
The infrared absorption spectra of hydrogenated amorphous silicon alloys have been simulated using MOPAC. The calculated spectra compare well with those obtained experimentally. Simulation studies have also been carried out on the effect of contamination of hydrogenated amorphous silicon by common atmospheric contaminants: oxygen and nitrogen. These studies provide a basis for the study of diffusion and reconstruction of amorphous silicon alloys during annealing and photodegradation. This article indicates that infrared spectroscopy, combined with molecular modeling, could be used to study the molecular mechanisms associated with the photodegradation of amorphous silicon alloys.
| Original language | English |
|---|---|
| Pages (from-to) | 306-312 |
| Number of pages | 7 |
| Journal | Journal of Computational Chemistry |
| Volume | 17 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Feb 1996 |
| Externally published | Yes |
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