Skip to main navigation Skip to search Skip to main content

Bandgap prediction of binary compounds via a machine learning approach utilizing gradient boosting regression

Research output: Contribution to journal › Article › peer-review

Abstract

This study developed a predictive model for the bandgap of binary materials using a machine learning approach based on the Gradient Boosting Regressor (GBR). The model showed exceptional performance on the training set, achieving a Mean Absolute Error (MAE) of 0.087, a Root Mean Squared Error (RMSE) of 0.118, and an R2 of 98%. While the model’s performance on the unseen test data was lower, with an R2 of 76%, this still indicates a strong capability to predict bandgaps, explaining over 76% of the variation. The performance drop suggests a minor degree of overfitting to the training data. Visualization of the results shows that while most predictions align closely with the ideal reference line, a few outliers lead to significant errors for certain materials. This is likely because compositional features alone are insufficient to capture the intricate physical properties governing these materials.

Original languageEnglish
Article number100
JournalJournal of Computational Electronics
Volume25
Issue number3
DOIs
Publication statusPublished - Jun 2026

Keywords

  • Bandgap
  • Binary compounds
  • Gradient boosting regression
  • Machine learning

Fingerprint

Dive into the research topics of 'Bandgap prediction of binary compounds via a machine learning approach utilizing gradient boosting regression'. Together they form a unique fingerprint.

Cite this