@inproceedings{3f8607039eee400c8aac5c25f16991cd,
title = "Atomistic simulation of oxygen molecule adsorption on vicinal silicon surface",
abstract = "Silicon and its oxide are still the main materials of electronic components, including the transistor. The thickness of SiO2 on a silicon surface, which is formed by oxidation of the silicon surface, is an important factor in the advance of the miniaturization of the transistor. In order to understand oxidation of Si (100) vicinal surfaces by O2 molecules, molecular dynamics (MD) simulations with reactive force field were performed at 300K. A reactive force field was used for the simulation to handle charge variation as well as the breaking and forming of chemical bonds associated with the oxidation reaction. It is found that oxygen molecules dissociate in a very short time in any type of terrace. There is no difference in the reactivity among the terraces of the surface.",
keywords = "Molecular dynamics, silicon, vicinal surface",
author = "Pamungkas, \{Mauludi Ariesto\}",
note = "Publisher Copyright: {\textcopyright} 2018 Author(s).; 8th Annual Basic Science International Conference: Coverage of Basic Sciences toward the World's Sustainability Challanges, BaSIC 2018 ; Conference date: 06-03-2018 Through 07-03-2018",
year = "2018",
month = oct,
day = "17",
doi = "10.1063/1.5062763",
language = "English",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
editor = "Corina Karim and Rodliyati Azrianingsih and Pamungkas, \{Mauludi Ariesto\} and Jatmiko, \{Yoga Dwi\} and Anna Safitri",
booktitle = "8th Annual Basic Science International Conference",
}