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A sub-μW, 1.0V CMOS temperature sensor circuit insensitive to device parameters

  • Ryota Sakamoto*
  • , Koichi Tanno
  • , Hiroki Tamura
  • , Zainul Abidin
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we firstly propose the CMOS temperature sensor circuit operating in the subthreshold region. The circuit has advantages of 1.0 V operation and sub-μW power consumption. Furthermore, it is insensitive to the device parameter of the fabrication process. Next, we design the high sensitivity temperature sensor circuit that can be realized by cascade-connection of the proposed temperature sensor circuits. The proposed circuits were evaluated through HSPICE with a standard 0.35 μm CMOS device parameter. The simulation demonstrate the maximum power consumption is 0.27 μW under the condition that the temperature range is from 0°C to 100°C, the sensitivity is 1.01 mV/°C and the maximum differential error is 0.87 %.

Original languageEnglish
Title of host publicationTENCON 2011 - 2011 IEEE Region 10 Conference
Subtitle of host publicationTrends and Development in Converging Technology Towards 2020
Pages626-629
Number of pages4
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event2011 IEEE Region 10 Conference: Trends and Development in Converging Technology Towards 2020, TENCON 2011 - Bali, Indonesia
Duration: 21 Nov 201124 Nov 2011

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON

Conference

Conference2011 IEEE Region 10 Conference: Trends and Development in Converging Technology Towards 2020, TENCON 2011
Country/TerritoryIndonesia
CityBali
Period21/11/1124/11/11

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