A study of the effects of annealing and outgassing on hydrogenated amorphous silicon

P. J. Jennings; J. C.L. Cornish; B. W. Clare; G. T. Hefter; D. J. Santjojo

doi:10.1016/S0040-6090(97)00396-9

A study of the effects of annealing and outgassing on hydrogenated amorphous silicon

P. J. Jennings^*
, J. C.L. Cornish
, B. W. Clare
, G. T. Hefter
, D. J. Santjojo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Annealing and outgassing of thin films of hydrogenated amorphous silicon (a-Si:H) are shown to produce major structural changes in the material. Outgassing can occur in three stages with thresholds at 350°C, 450°C and 575°C corresponding to conversion of SiH₃ groups to SiH₂ and SiH; conversion of SiH₂ groups to Si and SiH; and conversion of SiH to Si respectively. Heating to 575°C also appears to remove most of the hydrogen from vacancies and defects in the material. Such heat treatments could be useful for improving the stability of thin film a-Si:H devices.

Original language	English
Pages (from-to)	156-160
Number of pages	5
Journal	Thin Solid Films
Volume	310
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(97)00396-9
Publication status	Published - 21 Nov 1997
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Annealing
Hydrogenated amorphous silicon
Outgassing

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10.1016/S0040-6090(97)00396-9

Cite this

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title = "A study of the effects of annealing and outgassing on hydrogenated amorphous silicon",

abstract = "Annealing and outgassing of thin films of hydrogenated amorphous silicon (a-Si:H) are shown to produce major structural changes in the material. Outgassing can occur in three stages with thresholds at 350°C, 450°C and 575°C corresponding to conversion of SiH3 groups to SiH2 and SiH; conversion of SiH2 groups to Si and SiH; and conversion of SiH to Si respectively. Heating to 575°C also appears to remove most of the hydrogen from vacancies and defects in the material. Such heat treatments could be useful for improving the stability of thin film a-Si:H devices.",

keywords = "Annealing, Hydrogenated amorphous silicon, Outgassing",

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year = "1997",

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doi = "10.1016/S0040-6090(97)00396-9",

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TY - JOUR

T1 - A study of the effects of annealing and outgassing on hydrogenated amorphous silicon

AU - Jennings, P. J.

AU - Cornish, J. C.L.

AU - Clare, B. W.

AU - Hefter, G. T.

AU - Santjojo, D. J.

PY - 1997/11/21

Y1 - 1997/11/21

N2 - Annealing and outgassing of thin films of hydrogenated amorphous silicon (a-Si:H) are shown to produce major structural changes in the material. Outgassing can occur in three stages with thresholds at 350°C, 450°C and 575°C corresponding to conversion of SiH3 groups to SiH2 and SiH; conversion of SiH2 groups to Si and SiH; and conversion of SiH to Si respectively. Heating to 575°C also appears to remove most of the hydrogen from vacancies and defects in the material. Such heat treatments could be useful for improving the stability of thin film a-Si:H devices.

AB - Annealing and outgassing of thin films of hydrogenated amorphous silicon (a-Si:H) are shown to produce major structural changes in the material. Outgassing can occur in three stages with thresholds at 350°C, 450°C and 575°C corresponding to conversion of SiH3 groups to SiH2 and SiH; conversion of SiH2 groups to Si and SiH; and conversion of SiH to Si respectively. Heating to 575°C also appears to remove most of the hydrogen from vacancies and defects in the material. Such heat treatments could be useful for improving the stability of thin film a-Si:H devices.

KW - Annealing

KW - Hydrogenated amorphous silicon

KW - Outgassing

UR - https://www.scopus.com/pages/publications/0031275996

U2 - 10.1016/S0040-6090(97)00396-9

DO - 10.1016/S0040-6090(97)00396-9

M3 - Article

AN - SCOPUS:0031275996

SN - 0040-6090

VL - 310

SP - 156

EP - 160

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

A study of the effects of annealing and outgassing on hydrogenated amorphous silicon

Abstract

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Keywords

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