Skip to main navigation Skip to search Skip to main content

A study of non-infrared-active hydrogen bonding in a-Si:H thin film using combined calibrated temperature desorption spectroscopy and FTIR

Research output: Contribution to journal › Article › peer-review

Abstract

Non-infrared-active hydrogen bonding species were investigated by analyzing the infrared spectra and the calibrated temperature desorption spectroscopy (CTDS) spectra of hydrogen released during degassing of hydrogenated amorphous silicon thin films. Samples were degassed gradually using a linear temperature ramp (0.5°C/s). Each stage corresponds to a temperature at which the hydrogen effusion peaks can be found (∼340°C, ∼500°C and ∼610°C). Differences in the amounts of hydrogen obtained from the FTIR spectra and the CTDS measurement correspond to the non-infrared-active, occluded hydrogen.

Original languageEnglish
Pages (from-to)A2631-A2636
JournalMaterials Research Society Symposium-Proceedings
Volume609
DOIs
Publication statusPublished - 2000
Externally publishedYes

Fingerprint

Dive into the research topics of 'A study of non-infrared-active hydrogen bonding in a-Si:H thin film using combined calibrated temperature desorption spectroscopy and FTIR'. Together they form a unique fingerprint.

Cite this